Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure
Abbreviated Journal Title
Parameter extraction; Threshold voltage; Subthreshold Slope; Double; integration; Successive integration; Polysilicon; Nanowire; MOSFETs; Noise reduction; THIN-FILM TRANSISTORS; SURROUNDING-GATE MOSFETS; FIELD-EFFECT; TRANSISTOR; THRESHOLD-VOLTAGE; SUBTHRESHOLD BEHAVIOR; SOI MOSFETS; CHANNEL; MODEL; FABRICATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold Slope factor are extracted from noisy measured current-voltage characteristics. It is shown that the present method offers advantages over previous extraction procedures regarding data noise reduction. In addition, the normalized mutual integral difference operator method is scrutinized and an improvement of the method is presented. (C) 2010 Elsevier Ltd. All rights reserved.
"Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure" (2010). Faculty Bibliography 2010s. 617.