Optimized pMOS-Triggered Bidirectional SCR for Low-Voltage ESD Protection Applications

    Authors

    Z. X. Wang; R. C. Sun; J. J. Liou;D. G. Liu

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Bidirectional protection; electrostatic discharge (ESD); pMOS-triggered; silicon-controlled rectifier (SCR); trigger voltage; CMOS TECHNOLOGY; DEVICES; DESIGN; SPEED; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    In this paper, an optimized pMOS-triggered bidirectional silicon-controlled rectifier (PTBSCR) fabricated in a 0.18-mu m CMOS technology is proposed as a viable electrostatic discharge (ESD) protection solution. Capable of working under both the power-ON and power-OFF conditions, this structure is verified to provide bidirectional ESD protection performance superior to those reported in the literatures. Critical ESD parameters, such as the trigger voltage, holding voltage, and leakage current, can be flexibly adjusted via layout changes. With a low trigger voltage, a small ESD design window, a high robustness, and a small silicon area consumption, the PTBSCR is very suitable for low-voltage and low-power ESD protection applications.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    61

    Issue/Number

    7

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    2588

    Last Page

    2594

    WOS Identifier

    WOS:000338027200054

    ISSN

    0018-9383

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