Title

Optimized pMOS-Triggered Bidirectional SCR for Low-Voltage ESD Protection Applications

Authors

Authors

Z. X. Wang; R. C. Sun; J. J. Liou;D. G. Liu

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Bidirectional protection; electrostatic discharge (ESD); pMOS-triggered; silicon-controlled rectifier (SCR); trigger voltage; CMOS TECHNOLOGY; DEVICES; DESIGN; SPEED; Engineering, Electrical & Electronic; Physics, Applied

Abstract

In this paper, an optimized pMOS-triggered bidirectional silicon-controlled rectifier (PTBSCR) fabricated in a 0.18-mu m CMOS technology is proposed as a viable electrostatic discharge (ESD) protection solution. Capable of working under both the power-ON and power-OFF conditions, this structure is verified to provide bidirectional ESD protection performance superior to those reported in the literatures. Critical ESD parameters, such as the trigger voltage, holding voltage, and leakage current, can be flexibly adjusted via layout changes. With a low trigger voltage, a small ESD design window, a high robustness, and a small silicon area consumption, the PTBSCR is very suitable for low-voltage and low-power ESD protection applications.

Journal Title

Ieee Transactions on Electron Devices

Volume

61

Issue/Number

7

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

2588

Last Page

2594

WOS Identifier

WOS:000338027200054

ISSN

0018-9383

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