Power amplifier resilient design for process and temperature variations using an on-chip PLL sensing signal

    Authors

    J. S. Yuan;S. Chen

    Comments

    Authors: contact us about adding a copy of your work at [email protected]

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This paper presents RF power amplifier adaptive body bias compensation technique for output power and power-added efficiency resilience to process and temperature variations. The adaptive body biasing scheme uses a phase-lock loop for variability sensing to provide resilience through the threshold voltage adjustment to maintain power amplifier performance over a wide range of variability. Analytical equations are derived for physical insight. Circuit simulation results show that the adaptive body biasing design improves the robustness of the power amplifier in output power and power-added efficiency over process and temperature variations. (C) 2013 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    54

    Issue/Number

    1

    Publication Date

    1-1-2015

    Document Type

    Article

    Language

    English

    First Page

    167

    Last Page

    171

    WOS Identifier

    WOS:000331342800023

    ISSN

    0026-2714

    Share

    COinS
     

    Accessibility Statement

    This item was created or digitized prior to April 24, 2027, or is a reproduction of legacy media created before that date. It is preserved in its original, unmodified state specifically for research, reference, or historical recordkeeping. In accordance with the ADA Title II Final Rule, the University Libraries provides accessible versions of archival materials upon request. To request an accommodation for this item, please submit an accessibility request form.