Hot Carrier Injection Stress Effect on a 65 nm LNA at 70 GHz

    Authors

    J. S. Yuan; Y. Xu; S. D. Yen; Y. Bi;G. W. Hwang

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    Hot electron; low noise amplifier; noise figure; radio frequency; small-signal power gain; CMOS; NOISE; PERFORMANCE; DEGRADATION; TRANSISTORS; AMPLIFIER; NMOSFETS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The hot carrier injection stress effect on a 65 nm low-noise amplifier at the 70 GHz range of operation has been studied. The experimental data show that the minimum noise figure increases (similar to 2 dB) and the maximum small-signal power gain decreases (similar to 3 dB) after 10 h of HCI overstress due to transconductance degradation as evidenced by 65 nm individual transistor measurement.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    14

    Issue/Number

    3

    Publication Date

    1-1-2015

    Document Type

    Article

    Language

    English

    First Page

    931

    Last Page

    934

    WOS Identifier

    WOS:000341984600020

    ISSN

    1530-4388

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