Authors

J. W. Cleary; W. H. Streyer; N. Nader; S. Vangala; I. Avrutsky; B. Claflin; J. Hendrickson; D. Wasserman; R. E. Peale; W. Buchwald;R. Soref

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Abbreviated Journal Title

Opt. Express

Keywords

DOPED SILICON; PHOTONICS; SILICIDES; METALS; Optics

Abstract

Platinum germanides (PtGe) were investigated for infrared plasmonic applications. Layers of Pt and Ge were deposited and annealed. X-ray diffraction identified PtGe2 and Pt2Ge3 phases, and x-ray photoelectron spectroscopy determined vertical atomic composition profiles for the films. Complex permittivity spectra were measured by ellipsometry over the 2 to 15 mu m wavelength range. Surface plasmon polariton (SPP) characteristics such as propagation length and field penetration depth were calculated. Photon-to-SPP couplers in the form of 1D lamellar gratings were fabricated and characterized in the range 9 - 10.5 mu m via wavelength-dependent specular reflection spectra for multiple angles of incidence. The observed resonances compare well with calculated spectra for SPP excitation on PtGe2. Platinum germanides are CMOS compatible and may serve as SPP hosts for on-chip mid-IR plasmonic components with tighter field confinement than noble-metal hosts.

Journal Title

Optics Express

Volume

23

Issue/Number

3

Publication Date

1-1-2015

Document Type

Article

Language

English

First Page

3316

Last Page

3326

WOS Identifier

WOS:000349688800147

ISSN

1094-4087

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