Total ionizing dose sensitivity of function blocks in FRAM

    Authors

    K. Gu; J. J. Liou; W. Li; Y. Liu;P. Li

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Ferroelectric random acces memory; Microbeam; Total ionizing dose; X-ray; Co-60; FERROELECTRIC NONVOLATILE MEMORIES; PZT CAPACITORS; MOS CAPACITORS; CHARGE YIELD; RADIATION; DEVICES; IRRADIATION; RETENTION; SYSTEMS; OXIDES; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The total ionizing dose (TID) sensitivity of the function blocks, including the memory array, sense amplifier, row decoder, column decoder and I/O port, of the ferroelectric random access memory (FRAM) are investigated. An X-ray microbeam is used for the selective irradiation and detailed detection. The ferroelectric memory array is proved to have higher resistance to TID than the peripheral control circuitry, whereas the sense amplifier is the most sensitive parts in the FRAM circuitry. The failure phenomenon is studied when each function block is irradiated, and the failure mechanism is discussed based on each block's technological and circuital characteristics. In addition, the Co-60 gamma ray irradiation test is also performed to offer a comparison of the spot and global irradiation. (C) 2015 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    55

    Issue/Number

    6

    Publication Date

    1-1-2015

    Document Type

    Article

    Language

    English

    First Page

    873

    Last Page

    878

    WOS Identifier

    WOS:000355044500003

    ISSN

    0026-2714

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