Title

A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel

Authors

Authors

Z. Jia; J. L. Xu; X. Wu; M. M. Zhang;J. J. Liou

Comments

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Abbreviated Journal Title

Chin. Phys. Lett.

Keywords

PULSED-LASER DEPOSITION; NONVOLATILE MEMORY; ZNO FILMS; NANOWIRE; TEMPERATURE; SUBSTRATE; GROWTH; Physics, Multidisciplinary

Abstract

We report a back-gated metal-oxide-ferroelectric-metal (MOFM) field-effect transistor (FET) with lead zirconate titanate (PZT) material, in which an Al doped zinc oxide (AZO) channel layer with an optimized doping concentration of 1% is applied to reduce the channel resistance of the channel layer, thus guaranteeing a large enough load capacity of the transistor. The hysteresis loops of the Pt/PZT/AZO/Ti/Pt capacitor are measured and compared with a Pt/PZT/Pt capacitor, indicating that the remnant polarization is almost 40 mu C/cm(2) and the polarization is saturated at 20 V. The measured capacitance-voltage properties are analyzed as a result of the electron depletion and accumulation switching operation conducted by the modulation of PZT on AZO channel resistance caused by the switchable remnant polarization of PZT. The switching properties of the AZO channel layer are also proved by the current-voltage transfer curves measured in the back-gated MOFM ferroelectric FET, which also show a drain current switching ratio up to about 100 times.

Journal Title

Chinese Physics Letters

Volume

32

Issue/Number

2

Publication Date

1-1-2015

Document Type

Article

Language

English

First Page

5

WOS Identifier

WOS:000349419000038

ISSN

0256-307X

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