A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel

    Authors

    Z. Jia; J. L. Xu; X. Wu; M. M. Zhang;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Chin. Phys. Lett.

    Keywords

    PULSED-LASER DEPOSITION; NONVOLATILE MEMORY; ZNO FILMS; NANOWIRE; TEMPERATURE; SUBSTRATE; GROWTH; Physics, Multidisciplinary

    Abstract

    We report a back-gated metal-oxide-ferroelectric-metal (MOFM) field-effect transistor (FET) with lead zirconate titanate (PZT) material, in which an Al doped zinc oxide (AZO) channel layer with an optimized doping concentration of 1% is applied to reduce the channel resistance of the channel layer, thus guaranteeing a large enough load capacity of the transistor. The hysteresis loops of the Pt/PZT/AZO/Ti/Pt capacitor are measured and compared with a Pt/PZT/Pt capacitor, indicating that the remnant polarization is almost 40 mu C/cm(2) and the polarization is saturated at 20 V. The measured capacitance-voltage properties are analyzed as a result of the electron depletion and accumulation switching operation conducted by the modulation of PZT on AZO channel resistance caused by the switchable remnant polarization of PZT. The switching properties of the AZO channel layer are also proved by the current-voltage transfer curves measured in the back-gated MOFM ferroelectric FET, which also show a drain current switching ratio up to about 100 times.

    Journal Title

    Chinese Physics Letters

    Volume

    32

    Issue/Number

    2

    Publication Date

    1-1-2015

    Document Type

    Article

    Language

    English

    First Page

    5

    WOS Identifier

    WOS:000349419000038

    ISSN

    0256-307X

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