Studies on Electrical Properties of RF Sputtered Deposited Boron Carbon Nitride Thin Films

    Authors

    A. Prakash;K. B. Sundaram

    Comments

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    Abbreviated Journal Title

    ECS J. Solid State Sci. Technol.

    Keywords

    CHEMICAL-VAPOR-DEPOSITION; DIELECTRIC-CONSTANT; MECHANICAL-PROPERTIES; BCN FILMS; B-C; COATINGS; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films were deposited at various N-2/Ar gas flow ratios, substrate temperatures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations were performed as a function of deposition parameters. By varying the nitrogen concentration in the deposited films and substrate deposition temperatures, the electrical properties of BCN can be tuned accordingly. BCN films having dielectric constant as low as 2.13 with high dielectric breakdown strength of 3.4 MV/cm and resistivity of 3 x 10(12) Omega.cm were achieved. (C) The Author(s) 2015. Published by ECS. All rights reserved.

    Journal Title

    Ecs Journal of Solid State Science and Technology

    Volume

    4

    Issue/Number

    5

    Publication Date

    1-1-2015

    Document Type

    Article

    Language

    English

    First Page

    N25

    Last Page

    N29

    WOS Identifier

    WOS:000352224200003

    ISSN

    2162-8769

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