Silicon-Controlled Rectifier for Electrostatic Discharge Protection Solutions With Minimal Snapback and Reduced Overshoot Voltage
Abbreviated Journal Title
IEEE Electron Device Lett.
Keywords
ESD; direct-connected; SCR; stacking; overshoot; SCR-BASED DEVICES; ESD PROTECTION; TECHNOLOGIES; DESIGN; SPEED; Engineering, Electrical & Electronic
Abstract
An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode gate-cathode gate directly connected silicon-controlled rectifiers (DCSCRs), fabricated in a 0.18-mu m CMOS technology is reported in this letter. Two embedded diodes in the DCSCR dictate the turn-ON mechanism and hence give rise to a trigger voltage equal to twice the diode's turn-ON voltage. This approach enables the DCSCR to offer a diode-like transmission line pulsing IV characteristic with a minimal snapback and a SCR-like high-ESD robustness. At 25 degrees C, DCSCR has an acceptable nanoampere-level leakage current. Besides, it is verified that the DCSCR can significantly reduce overshoot voltage when stressed by very-fast-rising pulses. As such, an ESD clamp constructed by stacking a selected number of DCSCRs can offer a flexible trigger/holding voltage and is suitable for low and medium voltage ESD protection applications.
Journal Title
Ieee Electron Device Letters
Volume
36
Issue/Number
5
Publication Date
1-1-2015
Document Type
Article
Language
English
First Page
424
Last Page
426
WOS Identifier
ISSN
0741-3106
Recommended Citation
"Silicon-Controlled Rectifier for Electrostatic Discharge Protection Solutions With Minimal Snapback and Reduced Overshoot Voltage" (2015). Faculty Bibliography 2010s. 6818.
https://stars.library.ucf.edu/facultybib2010/6818
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