Title

Structural Evolutions in Polymer-Derived Carbon-Rich Amorphous Silicon Carbide

Authors

Authors

K. W. Wang; B. S. Ma; X. Q. Li; Y. G. Wang;L. N. An

Comments

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Abbreviated Journal Title

J. Phys. Chem. A

Keywords

HIGH-TENSILE STRENGTH; A-C-H; THIN-FILMS; POLYCARBOSILANE PCS; CERAMICS; SPECTROSCOPY; TEMPERATURE; RESONANCE; SPECTRA; OXYCARBIDES; Chemistry, Physical; Physics, Atomic, Molecular & Chemical

Abstract

The detailed structural evolutions in polycarbosilane-derived carbon-rich amorphous SiC were investigated semiquantitatively by combining experimental and analytical methods. It is revealed that the material is comprised of a Si-containing matrix phase and a free-carbon phase. The matrix phase is amorphous, comprised of SiC4 tetrahedra, SiCxOx-4 tetrahedra, and Si-C-C-Si/Si-C-H defects. With increasing pyrolysis temperature, the amorphous matrix becomes more ordered, accompanied by a transition from SiC2O2 to SiCO3. The transition was completed at 1250 degrees C, where the matrix phase started to crystallize by forming a small amount of beta-SiC. The free-carbon phase was comprised of carbon nanoclusters and C-dangling bonds. Increasing pyrolysis temperature led to the transition of the free carbon from amorphous carbon to nanocrystalline graphite. The size of the carbon clusters decreased first and then increased, while the C-dangling bond content decreased continuously. The growth of carbon clusters was attributed to Ostwald ripening and described using a two-dimensional grain growth model. The calculated activation energy suggested that the decrease in C-dangling bonds is directly related to the lateral growth of the carbon clusters.

Journal Title

Journal of Physical Chemistry A

Volume

119

Issue/Number

4

Publication Date

1-1-2015

Document Type

Article

Language

English

First Page

552

Last Page

558

WOS Identifier

WOS:000348752400002

ISSN

1089-5639

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