The Impact of Junction Doping Distribution on Device Performance Variability and Reliability for Fully Depleted Silicon on Insulator With Thin Box Layer MOSFETs

    Authors

    W. K. Yeh; C. L. Lin; T. H. Chou; K. Wu;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Nanotechnol.

    Keywords

    Device variability; FDSOI; junction doping distribution; reliability; ultrathin buried oxide (UTB); SOI MOSFETS; FLUCTUATIONS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    In this study, we investigate the impact of junction doping distribution (LDD/halo) on variations and asymmetry of device characteristics for fully depleted silicon on insulator (FD-SOI) with ultrathin buried oxide layer nMOSFET. The device performance and hot carrier induced degradations have also been examined. Junction doping dose of LDD/halo affects the effective channel length, parasitic source/drain resistance, and channel mobility. High junction doping dose enhances the device's performance but degrades device stability and reliability. Compared to high junction doping FDSOI nMOSFET, low junction doping device has lower device variability, better symmetry, and reliability, but suffers lower channel mobility and device driving capability.

    Journal Title

    Ieee Transactions on Nanotechnology

    Volume

    14

    Issue/Number

    2

    Publication Date

    1-1-2015

    Document Type

    Article

    Language

    English

    First Page

    330

    Last Page

    337

    WOS Identifier

    WOS:000351369400018

    ISSN

    1536-125X

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