Optical Properties of Heavily Al-Doped Single-Crystal Si3N4 Nanobelts

    Authors

    F. M. Gao; Y. S. Wang; L. G. Zhang; W. Y. Yang;L. A. An

    Comments

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    Abbreviated Journal Title

    J. Am. Ceram. Soc.

    Keywords

    HYDROGENATED SILICON-NITRIDE; THIN-FILMS; PHOTOLUMINESCENCE; NANOWIRES; LUMINESCENCE; PYROLYSIS; SINX; Materials Science, Ceramics

    Abstract

    The optical properties of heavily Al-doped single-crystal Si3N4 nanobelts are investigated by measuring their absorption, photoluminescence, and photoluminescence excitation spectra. The results suggest that the doped Si3N4 exhibit two absorptions at 2.5 and 4.2 eV, instead of absorption at 5.0 eV in the pure Si3N4. The doped nanobelts show light emissions in a range of 1.4 to 3.6 eV, which is red-shifted as compared with that of pure Si3N4 nanobelts. These results are ascribed to the unique doping mechanism of Al, which generates two types of defects.

    Journal Title

    Journal of the American Ceramic Society

    Volume

    93

    Issue/Number

    5

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    1364

    Last Page

    1367

    WOS Identifier

    WOS:000277083500027

    ISSN

    0002-7820

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