Snapback and Postsnapback Saturation of Pseudomorphic High-Electron Mobility Transistor Subject to Transient Overstress

    Authors

    Q. Cui; S. Parthasarathy; J. A. Salcedo; J. J. Liou; J. J. Hajjar;Y. Z. Zhou

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    Electrostatic discharge (ESD); high-electron mobility transistor; saturation; snapback; Engineering, Electrical & Electronic

    Abstract

    The snapback and postsnapback saturation characteristics in a pseudomorphic high-electron mobility transistor (PHEMT) subject to electrostatic discharge (ESD) transient over-stress are studied. This is undertaken, for the first time, via transmission line pulsing (TLP)-like 2-D device simulations and benchmarked against TLP measurements. Physical mechanisms underlying the postsnapback behavior and ESD-induced failure are identified and discussed by analyzing TLP-like simulation results rather than extrapolating dc-like numerical simulation data.

    Journal Title

    Ieee Electron Device Letters

    Volume

    31

    Issue/Number

    5

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    425

    Last Page

    427

    WOS Identifier

    WOS:000277047300015

    ISSN

    0741-3106

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