Title

Snapback and Postsnapback Saturation of Pseudomorphic High-Electron Mobility Transistor Subject to Transient Overstress

Authors

Authors

Q. Cui; S. Parthasarathy; J. A. Salcedo; J. J. Liou; J. J. Hajjar;Y. Z. Zhou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

Electrostatic discharge (ESD); high-electron mobility transistor; saturation; snapback; Engineering, Electrical & Electronic

Abstract

The snapback and postsnapback saturation characteristics in a pseudomorphic high-electron mobility transistor (PHEMT) subject to electrostatic discharge (ESD) transient over-stress are studied. This is undertaken, for the first time, via transmission line pulsing (TLP)-like 2-D device simulations and benchmarked against TLP measurements. Physical mechanisms underlying the postsnapback behavior and ESD-induced failure are identified and discussed by analyzing TLP-like simulation results rather than extrapolating dc-like numerical simulation data.

Journal Title

Ieee Electron Device Letters

Volume

31

Issue/Number

5

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

425

Last Page

427

WOS Identifier

WOS:000277047300015

ISSN

0741-3106

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