Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
MOLECULAR-DYNAMICS SIMULATION; Physics, Applied
Abstract
We present an empirical potential developed for silicon under conditions of strong electronic excitation. We show the essentially athermal nature of the melting transition when the electronic temperature is extremely high. The resulting liquid is shown to be distinct from ordinary liquid silicon. For less intense excitations, we determine the thermal melting temperature and demonstrate the possible existence of a regime where ordinary thermodynamic melting can occur but at a reduced temperature T(m). We show laser-induced softening of the lattice can lead to lattice cooling for very short time scales (similar to 100 fs), an effect never before recognized.
Journal Title
Applied Physics Letters
Volume
97
Issue/Number
15
Publication Date
1-1-2010
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Shokeen, Lalit and Schelling, Patrick K., "An empirical potential for silicon under conditions of strong electronic excitation" (2010). Faculty Bibliography 2010s. 786.
https://stars.library.ucf.edu/facultybib2010/786
Comments
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