Preferred Orientation of SiC Nanowires Induced by Substrates

    Authors

    H. T. Wang; L. Lin; W. Y. Yang; Z. P. Xie;L. N. An

    Comments

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    Abbreviated Journal Title

    J. Phys. Chem. C

    Keywords

    SILICON-CARBIDE NANOWIRES; FIELD-EMISSION PROPERTIES; IN-SITU GROWTH; CARBOTHERMAL REDUCTION; NANORODS; CERAMICS; ARRAYS; NANOSTRUCTURES; MECHANISM; CARBON; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, ; Multidisciplinary

    Abstract

    A technique to directly synthesize highly oriented SiC nanowire arrays on single-crystalline SiC substrates was present in this paper. The great impacts of substrate orientation on the growth habits of nanowires were systematically investigated. It has been found that nanowires can grow along the [(1)over bar102] direction or its' equivalent ones on SiC (0001) substrates, while nanowires grow along the [10(1)over bar0] direction or its' equivalent ones on SiC (10(1)over bar0) and (11(2)over bar0) substrates. This technique for the preferred growth of SiC nanostructures can largely improve the quality of SiC nanowire arrays, which have wide applications in the fields of electronic nanodevices, optoelectronic nanodevices, and photocatalytic nanomaterials.

    Journal Title

    Journal of Physical Chemistry C

    Volume

    114

    Issue/Number

    6

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    2591

    Last Page

    2594

    WOS Identifier

    WOS:000274354800029

    ISSN

    1932-7447

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