Quality of Cuinse2 and CdS Thin Films for Solar Cells

Secondary Author(s)

Ribas, P R F; Moutinho, Helio; Swartzlander, Amy; Asher, S E; Goral, J P; Kazmerski, Lawrence

Keywords

CuInSe2 thin films; CdS thin films; Solar cells; Thin film deposition; Annealing; Stoichiometry; High vacuum deposition; Homogeneity

Abstract

Stoichiometric p-type, CuInSe2 thin films have been high vacuum deposited on heated substrates, by co-evaporating to completion proportional quantities of Cu and In, in the presence of excess se vapors. It was found that annealed Cu and In-rich layers deposited respectively at 350°C and 400°C are inhomogeneous; and that the films can be made homogeneous by depositing and subsequently annealing the In-rich layer at 420°C for 5.5 min. CdS thin films deposited using the hot wall technique on substrates heated to 190°C, with an air leak total pressures of 5-7x10-6 showed hillock growth and considerable oxygen incorporation.

Date Published

1-1-1987

Identifiers

1007

Subjects

Thin films; Solar cells; Copper indium selenide; Cadmium sulfide; Semiconductors; Vacuum technology

Local Subjects

PV Cells

Collection

FSEC Energy Research Center® Collection

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