Vapor Phase Deposits of Bismuth Selenide

Secondary Author(s)

Goswami, A

Keywords

Vapor phase deposition; Bismuth selenide; Electron diffraction; Epitaxial growth; Crystal structures; Substrate temperature; Phase transition

Abstract

An electron diffraction study has been made on the vapor phase deposits of bismuth selenide formed on collodion, different faces of rock salts, and also on mica both by reflection and transmission methods. The substrate temperature was varied from room temperature to about 400°C. Deposits formed at the lower temperature range retained the bulk rhombohedral (hexagonal) structure; whereas those formed at higher temperatures developed a new cubic structure (a₀5.87 ') often associated with a corresponding hcp phase. Another cubic structure with a little higher lattice parameter (a₀5.92 ') was also observed. All these phases, however, grew epitaxially on single crystal substrates with appropriate orientations.

Date Published

1-1-1972

Identifiers

1899

Subjects

Thin films; Crystallography; Electrons--Diffraction; Materials--Thermal properties; Semiconductors

Collection

FSEC Energy Research Center® Collection

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