Photoelectrochemical Characterization of High-Ga Content CIGS2 Thin Films
Secondary Author(s)
Turner, John A.; Fernandez, Arturo M.
Keywords
PV Modules; Photoelectrochemical characterization; CIGS2 thin films; Photocurrent spectroscopy; Electrochemical analysis; Semiconductor materials
Abstract
This paper presents a study of photoelectrochemical characterization of CuIn1-xGaxS2 (CIGS2) thin films with Ga content, x, of 0.3-0.5. Flat band potential, doping density ND, and bandgap have been determined using photocurrent spectroscopy. CIGS2 thin film samples on Mo-coated glass substrates with Ohmic contacts were mounted on an electrode tip coated with silver paint. A three-electrode system was used with platinum mesh as the counter electrode, a saturated calomel electrode (SCE) as reference electrode, and the sample as working electrode. Variation of capacitance voltage at different frequencies was measured in a buffer solution with a computer controlled Impedance Gainphase Analyzer module SI1260 connected to an Electrochemical Interface SI1287 of Solartron. Photocurrent spectroscopy was carried out in a buffer solution with a 250 W Oriel tungsten halogen quartz lamp, monochromator, a chopper, optical filters, a lock-in amplifier SR530, and Potentiostat VersasStar II of EG
Date Published
1-28-2003
Identifiers
562
Subjects
Thin films; Photoelectrochemistry; Semiconductors; Electrochemical analysis; Photocurrent spectroscopy
Local Subjects
PV Modules
Collection
FSEC Energy Research Center® Collection
STARS Citation
Florida Solar Energy Center and Dhere, Neelkanth, "Photoelectrochemical Characterization of High-Ga Content CIGS2 Thin Films" (2003). FSEC Energy Research Center®. 562.
https://stars.library.ucf.edu/fsec/562
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