Photoelectrochemical Characterization Of High-Ga Content CIGS2 Thin Films
Turner, John A.; Fernandez, Arturo M.
This paper presents a study of photoelectrochemical characterization of CuIn1-xGaxS2 (CIGS2) thin films with Ga content, x, of 0.3-0.5. Flat band potential, doping density ND, and bandgap have been determined using photocurrent spectroscopy. CIGS2 thin film samples on Mo-coated glass substrates with Ohmic contacts were mounted on an electrode tip coated with silver paint. A three-electrode system was used with platinum mesh as the counter electrode, a saturated calomel electrode (SCE) as reference electrode, and the sample as working electrode. Variation of capacitance voltage at different frequencies was measured in a buffer solution with a computer controlled Impedance Gainphase Analyzer module SI1260 connected to an Electrochemical Interface SI1287 of Solartron. Photocurrent spectroscopy was carried out in a buffer solution with a 250 W Oriel tungsten halogen quartz lamp, monochromator, a chopper, optical filters, a lock-in amplifier SR530, and Potensiostat VersasStar II of EG
Florida Solar Energy Center and Dhere, Neelkanth, "Photoelectrochemical Characterization Of High-Ga Content CIGS2 Thin Films" (2003). FSEC Energy Research Center®. 562.