Title

The electromigration behavior of single crystal copper

Abstract

The trend in integrated circuit (IC) technology is beginning to move from very large-scale integration (VLSI) to ultra large-scale integration (ULSI) circuitry. Electromigration threatens the reliability of these circuits. Copper interconnects are being extensively researched to replace the traditional aluminum lines. Electromigration studies were performed on single crystal copper lines. A (100) and a (110) oriented single crystal copper sample were each prepared from a bulk ( 100) copper sample by site specific focused ion beam milling. Preliminary findings show that the (100) line did not fail within the predetermined testing time and therefore possesses better electromigration properties over the (110) line. The (110) line failed in both contact pads and appears to be diffusion related. This study indicates that (100) oriented or ( 100) textured lines may perform better under conditions where electromigration issues may dominate. This study also shows the viability for performing further work on determining the preferred ,, crystallographic orientation for copper interconnects.

Notes

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Thesis Completion

2001

Semester

Fall

Advisor

Giannuzzi, Lucille A.

Degree

Bachelor of Science (B.S.)

College

College of Engineering

Degree Program

Electrical Engineering

Subjects

Dissertations, Academic -- Engineering;Engineering -- Dissertations, Academic

Format

Print

Identifier

DP0021640

Language

English

Access Status

Open Access

Length of Campus-only Access

None

Document Type

Honors in the Major Thesis

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