Abstract
Methods of producing fullerenes in large-macroscopic quantities inexpensively is disclosed without using solid carbon material such as graphite. In a preferred embodiment, fullerenes are formed by a hot filament CVD procedure. The fullerenes occur in the soot that forms as a by-product on the edges of the substrate holder. Mass spectrum of soot deposits shows lines corresponding to C60. From the typical concentrations of gaseous species in the diamond-growing CVD chamber, hydrocarbon species including CH3 or C2H2 can be the precursors for the formation of fullerenes in the CVD chamber. A method of using fullerenes to enhance the properties of rubber composites is also described.
Document Type
Patent
Patent Number
US 5,510,098
Application Serial Number
08/176,543
Issue Date
4-23-1996
Current Assignee
UCFRF
Assignee at Issuance
UCFRF
College
College of Sciences
Department
Physics
Allowance Date
6-26-1995
Filing Date
1-3-1994
Assignee at Filing
UCFRF
Filing Type
Nonprovisional Application Record
Donated
no
Recommended Citation
Chow, Lee, "CVD Method of Producing and Doping Fullerenes" (1996). UCF Patents. 104.
https://stars.library.ucf.edu/patents/104