Abstract
A composition and method for fabricating and tuning a dopant based core-shell semiconductor having a quantum dot core composed of an alloy of cadmium sulfide (CdS) and zinc sulfide (ZnS) as semi-conductor materials include a dopant of maganese (Mn) added to the core and outer shell of zinc sulfide (ZnS). The dopant based core/shell quantum dot semiconductor of the present invention allows the fine tuning of an excitation band-gap, covering a wide range (from 2.4 eV to approximately 4 eV). When doped with Mn, these alloy Qdots emit bright yellow/orange light. Tuning of the exicitation band is accomplished by changing the allow composition of the core. Based on photophysical studies a new core/shell model is provided, in plase of the traditional core/shell model. Due to the interfacial disffusion of the cations from the core and shell an intermediate alloy layer is formed providing an innter shell; this inner shell layer is the real host of the dopant ions.
Document Type
Patent
Patent Number
US 7,776,630
Application Serial Number
12/686,552
Issue Date
8-17-2010
Current Assignee
UCFRF
Assignee at Issuance
UCFRF
College
NanoScience Technology Center
Department
NanoScience Technology Center
Allowance Date
3-22-2010
Filing Date
1-13-2010
Assignee at Filing
UCFRF
Filing Type
Nonprovisional Application Record
Donated
no
Recommended Citation
Santra, Swadeshmukul and Kar, Soumitra, "Excitation band-gap tuning of dopant based quantum dots with core-inner shell-outer shell DIV" (2010). UCF Patents. 166.
https://stars.library.ucf.edu/patents/166