Abstract
An extremely non-degenerate two photon absorption (END-2PA) method and apparatus provide for irradiating a semiconductor material substrate simultaneously with two photons each of different energy less than a bandgap energy of the semiconductor material substrate but in an aggregate greater than the bandgap energy of the semiconductor material substrate. A ratio of a higher energy photon energy to a lower energy is at least about 3.0. Alternatively, or as an adjunct, the higher energy and the lower energy photon has an energy no greater than about 25% of the bandgap energy.
Document Type
Patent
Patent Number
US 8,778,703
Application Serial Number
13/680,408
Issue Date
7-15-2014
Current Assignee
UCFRF
Assignee at Issuance
UCFRF
College
College of Optics and Photonics
Department
CREOL
Allowance Date
3-14-2014
Filing Date
11-19-2012
Assignee at Filing
UCFRF
Filing Type
Nonprovisional Application Record
Donated
no
Recommended Citation
Vanstryland, Eric and Hagan, David, "Extremely Non-Degenerate Two Photon Absorption Sensing Method, Apparatus, and Applications" (2014). UCF Patents. 176.
https://stars.library.ucf.edu/patents/176