Abstract

A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured barium cerate with platinum catalyst nanoparticles. Initial exposure to a UV light source, at room temperature, causes burning of organic residues present on the sensor surface and provides a clean surface for sensing hydrogen at room temperature. A giant room temperature hydrogen sensitivity is observed after making the UV source off. The hydrogen sensor of the invention can be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently used at room temperature.

Document Type

Patent

Patent Number

US 8,034,650

Application Serial Number

12/776,051

Issue Date

10-11-2011

Current Assignee

UCFRF

Assignee at Issuance

UCFRF

College

College of Engineering and Computer Science (CECS)

Department

Mechanical and Aerospace Engineering

Allowance Date

5-31-2011

Filing Date

5-7-2010

Assignee at Filing

UCFRF

Filing Type

Nonprovisional Application Record

Donated

no

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