Abstract
A frequency selective surface-based (FSS-based) device (200) for processing electromagnetic waves providing at least a third order response. The FSS-based device includes a first FSS (202), a second FSS (210), and a high quality factor (Q) FSS (206) interposed between the first and second FSSs. A first dielectric layer (204) and a second dielectric layer (208) separate the respective FSS layers. The first and second FSSs have the first and second primary resonant frequencies, respectively. The high Q FSS has a lower primary resonant frequency relative to the first and second primary resonant frequencies. The overall electrical thickness of the FSS device can be < 1/10 of a nano. The high Q FSS has a loaded quality factor of at least thirty at the lower primary resonant frequency.
Document Type
Patent
Patent Number
US 7,639,206
Application Serial Number
12/115,188
Issue Date
12-29-2009
Current Assignee
UCFRF
Assignee at Issuance
UCFRF
College
College of Engineering and Computer Science (CECS)
Department
Electrical Engineering & Computer Science - CS Division
Allowance Date
11-12-2009
Filing Date
5-5-2008
Assignee at Filing
UCFRF
Filing Type
Nonprovisional Application Record
Donated
no
Recommended Citation
Behdad, Nader, "Low-Profile Frequency Selective Surface Based Device and Methods of Making the Same" (2009). UCF Patents. 310.
https://stars.library.ucf.edu/patents/310