Abstract

The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition AlxInyGal-x-y N (where O?x?1, 0?y?1, and 0?x+y?1). In a specific embodiment, GaN substrates, with low dislocation densities (˜107 cm2) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO2, LiAlO2, MgAlScO4, Al2MgO4, and LiNdO2. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both. In particular, the subject hybrid reactor can go back and forth between MOVPE and HVPE in situ so that the substrate does not have to be transported between reactor apparatus and, therefore, cooled between the performance of different growth techniques.

Document Type

Patent

Patent Number

US 6,218,280

Application Serial Number

09/336,286

Issue Date

4-17-2001

Current Assignee

Joint Assignment w/UCFRF: University of Florida Research Foundation, Inc.

Assignee at Issuance

Joint Assignment w/UCFRF: University of Florida Research Foundation, Inc.

College

College of Optics and Photonics

Department

CREOL

Filing Date

6-18-1999

Assignee at Filing

Joint Assignment w/UCFRF: University of Florida Research Foundation, Inc.

Filing Type

Nonprovisional Application Record

Donated

no

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