Abstract

A method is provided for growing a diamond thin film on a selected substrate. First the substrate is prepared by scratching the surface thereof with diamond paste. The substrate is then confined in an enclosed space which includes high purity hydrogen and high purity methane gasses under relatively low pressure. The substrate is then irradiated with microwave energy to subject the substrate to a plasma exhibiting a first predetermined power density for a first period of time sufficient to form, on the substrate, diamond-like ball structure particles. The power density of the plasma to which the substrate is exposed is then effectively increased to a second predetermined power density and the substrate in exposed to the plasma for a second period of time sufficiently long such that (100) diamond faces grow on top of the ball structure particles. Finally, the irradiation of the substrate with the diamond-like ball structure particles thereon is continued at the second predetermined power

Document Type

Patent

Patent Number

US 5,240,749

Application Serial Number

07/750,309

Issue Date

8-31-1993

Current Assignee

UCFRF

Assignee at Issuance

UCFRF

College

College of Sciences

Department

Physics

Allowance Date

3-20-1993

Filing Date

8-27-1991

Assignee at Filing

UCFRF

Filing Type

Nonprovisional Application Record

Donated

no

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