Abstract

A resistor, fabricating method, and thermal sensor material for resistors that incorporate high Temperature Coefficient of Resistance (TCR) values and low resistivity for better sensitivity in infrared imaging applications are disclosed. Amorphous oxide thin films, preferably oxides of vanadium (VOx), were deposited on thermally grown silicon dioxide by direct current (DC) magnetron co-sputtering of noble metals (gold and platinum) in a controlled argon/oxygen atmosphere. The ideal conditions for preparing an amorphous vanadium oxide/noble metal thin film are identified. TCR and resistivity results showed that the additions of gold (Au) and platinum (Pt) into VOx reduced the resistivity. However, only gold (Au) was found to improve TCR value. Reducing the amount of oxygen in the thin film, further improved the ratio between TCR and resistivity. Infrared detection and imaging devices can be greatly improved with a “drop in” amorphous vanadium oxide/noble metal thin film of the present i

Document Type

Patent

Patent Number

US 8,502,639 B1

Application Serial Number

13/554,591

Issue Date

8-6-2013

Current Assignee

UCFRF

Assignee at Issuance

UCFRF

College

Advanced Materials Processing & Analysis Center (AMPAC)

Department

Advanced Materials Processing & Analysis Center (AMPAC)

Allowance Date

4-1-2013

Filing Date

7-20-2012

Assignee at Filing

UCFRF

Filing Type

Nonprovisional Application Record

Donated

no

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