Abstract

A high repetition-rate laser plasma target source system and lithography system is disclosed. The target source system comprises in a preferred embodiment a liquid tank source and freezer which freezes microscopic particles into crystal shapes which are projected by a nozzle jet from a high repetition rate liquid-droplet injector into the path of a flashing laser beam, which results in producing soft x-rays of approximately 13 nm. Uncollected and unshot target crystals are collected and reliquified by a heater source in order to be recycled back to the liquid tank source. Optionally an auxiliary source and detector system can be used to allow for instantaneous triggering of the laser beam. The target source system can be incorporated into well known EUV lithography systems for the production of wafer chips.

Document Type

Patent

Patent Number

US 5,459,771

Application Serial Number

08/222,608

Issue Date

10-17-1995

Current Assignee

UCFRF

Assignee at Issuance

UCFRF

College

College of Optics and Photonics

Department

CREOL

Allowance Date

3-30-1995

Filing Date

4-1-1994

Assignee at Filing

UCFRF

Filing Type

Nonprovisional Application Record

Donated

no

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