Abstract

A high repetition-rate laser plasma target source system wherein ice crystals are irradiated by a laser and lithography system. The target source system comprises in a preferred embodiment a liquid tank source and freezer means which freezes microscopic particles into crystal shapes which are projected by a nozzle jet from a high repetition rate liquid-droplet injector into the path of a flashing laser beam, which results in producing soft x-rays of approximately 11.7 nm and 13 nm. Uncollected and unshot target crystals are collected and reliquified by a heater source in order to be recycled back to the liquid tank source. Optionally an auxiliary source and detector system can be used to allow for instantaneous triggering of the laser beam. The target source system can be incorporated into well known EUV lithography systems for the production of wafer chips.

Document Type

Patent

Patent Number

US 5,577,091

Application Serial Number

08/372,297

Issue Date

11-19-1996

Current Assignee

UCFRF

Assignee at Issuance

UCFRF

College

College of Optics and Photonics

Department

CREOL

Allowance Date

5-2-1996

Filing Date

1-13-1995

Assignee at Filing

UCFRF

Filing Type

Nonprovisional Application Record

Donated

no

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