Title

Simulation of silicon carbide power metal oxide semiconductor field effect transistors at high temperature

Author

Shaikh Ferdouse Shams, University of Central Florida

Notes

This item is only available in print in the UCF Libraries. If this is your thesis or dissertation, you can help us make it available online for use by researchers around the world by downloading and filling out the Internet Distribution Consent Agreement. You may also contact the project coordinator Kerri Bottorff for more information.

Graduation Date

1998

Semester

Spring

Advisor

Sundaram, Kalpathy

Degree

Master of Science (M.S.)

College

College of Engineering

Department

Electrical and Computer Engineering

Format

Print

Language

English

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Subjects

Dissertations, Academic -- Engineering; Engineering -- Dissertations, Academic

STARS Citation

Shams, Shaikh Ferdouse, "Simulation of silicon carbide power metal oxide semiconductor field effect transistors at high temperature" (1998). Retrospective Theses and Dissertations. 2532.
https://stars.library.ucf.edu/rtd/2532