Thin films, Optical properties
The use of DC arc optical emission spectroscopy (OES) for quantitative analysis of thin films deposited on graphite electrodes was investigated as a process control tool. Three binary systems were evaluated: nickel-chromium, phosphorous-silicon, and silicon-aluminum. Sampling by direct deposition onto graphite electrodes placed in the deposition chamber with product runs proved to be a rapid, representative, and non-disruptive technique. Standard electrodes were prepared for each system either by evaporation of solutions of known concentration onto the tips of electrodes or by weighing out powdered standards of the appropriate concentrations. Standard curves were then prepared by burning multiple sets of standard electrodes in a DC arc of 15 amperes and obtaining intensity rations of selected analytical line pairs. Comparison of the OES technique with atomic absorption, electron microprobe, or gravimetric analysis of samples from the same deposition showed absolute agreement to within ±3% for the nickel-chromium system, ±0.3% for the phosphorous-silicon system, and ±0.2% for the silicon-aluminum system. Maximum relative percent error for the techniques were 5%, 10%, and 12.5% respectively.
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Madsen, Brooke C.
Master of Science (M.S.)
College of Natural Sciences
vi, 33 pages
Length of Campus-only Access
Masters Thesis (Open Access)
Thin films -- Optical properties
Hogrefe, Arnold W., "Quantitative Analysis of Thin Films by DC ARC Optical Emission Spectroscopy" (1977). Retrospective Theses and Dissertations. 342.