Title

SPRITE Detector Characterization and System Optimization Through Impulse Response Testing

Abstract

Signal Processing In The Element (SPRITE) detectors operating in the 8-12 μm region have been amply characterized in the past few years. They are typically well behaved and the material properties of 8-12μm HgCdTe lend themselves to SPRITE operation. SPRITE detectors operating in the 3-5 μm region, however, are insufficiently characterized and the material presents several design challenges. This paper presents an approach to SPRITE characterization which, through a single test, delivers carrier lifetime, mobility and drift velocity versus bar length. These parameters may easily be tested over temperature and various bias voltages. Using this data, the 3-5 μm (or 8-12 μm) SPRITE detector configuration for optimal system performance may be determined and the system performance predicted. A method of performance prediction which uses elemental parameters and does not rely on artificial detector area or the number of equivalent elements will be presented.

Notes

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Graduation Date

1989

Semester

Fall

Advisor

Boreman, Glenn

Degree

Master of Science (M.S.)

College

College of Engineering

Department

Electrical Engineering and Communication Sciences

Format

Print

Language

English

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Subjects

Dissertations, Academic -- Engineering; Engineering -- Dissertations, Academic

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