SPRITE Detector Characterization and System Optimization Through Impulse Response Testing
Signal Processing In The Element (SPRITE) detectors operating in the 8-12 μm region have been amply characterized in the past few years. They are typically well behaved and the material properties of 8-12μm HgCdTe lend themselves to SPRITE operation. SPRITE detectors operating in the 3-5 μm region, however, are insufficiently characterized and the material presents several design challenges. This paper presents an approach to SPRITE characterization which, through a single test, delivers carrier lifetime, mobility and drift velocity versus bar length. These parameters may easily be tested over temperature and various bias voltages. Using this data, the 3-5 μm (or 8-12 μm) SPRITE detector configuration for optimal system performance may be determined and the system performance predicted. A method of performance prediction which uses elemental parameters and does not rely on artificial detector area or the number of equivalent elements will be presented.
This item is only available in print in the UCF Libraries. If this is your thesis or dissertation, you can help us make it available online for use by researchers around the world by downloading and filling out the Internet Distribution Consent Agreement. You may also contact the project coordinator Kerri Bottorff for more information.
Master of Science (M.S.)
College of Engineering
Electrical Engineering and Communication Sciences
Length of Campus-only Access
Masters Thesis (Open Access)
Dissertations, Academic -- Engineering; Engineering -- Dissertations, Academic
Anderson, Barry K., "SPRITE Detector Characterization and System Optimization Through Impulse Response Testing" (1989). Retrospective Theses and Dissertations. 4102.