Keywords

solar cells; semiconductor films

Abstract

For the fabrication of semiconductor devices, solar cells, and infrared detectors, thin film deposition methods are required. Of the deposition methods currently available including MBE, LPE, and MOCVD; MOCVD is preferred due to its relatively low cost per wafer, versatility, and high wafer throughput. Requirements which must be considered in the design of a deposition system are discussed. An MOCVD system is designed such that MOCVD can be carried out by plasma enhanced deposition (PED) or low pressure metal-organic chemical vapor deposition (LPMOCVD). As a result of the inherent characteristics of the two methods, a wide range of operational temperatures and pressures are possible. Software is developed for system control including a graphical display of the process schematic. The deposition of GaAS on Si is given as one possible application for this type system.

Notes

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Graduation Date

1988

Semester

Spring

Advisor

Grogan, Austin L.

Degree

Master of Science (M.S.)

College

College of Engineering

Degree Program

Engineering

Format

PDF

Pages

62 p.

Language

English

Rights

Public Domain

Release Date

5-1-1988

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Identifier

DP0023903

Download

Restricted to the UCF community until 5-1-1988; it will then be open access.

Included in

Engineering Commons

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