Keywords
solar cells; semiconductor films
Abstract
For the fabrication of semiconductor devices, solar cells, and infrared detectors, thin film deposition methods are required. Of the deposition methods currently available including MBE, LPE, and MOCVD; MOCVD is preferred due to its relatively low cost per wafer, versatility, and high wafer throughput. Requirements which must be considered in the design of a deposition system are discussed. An MOCVD system is designed such that MOCVD can be carried out by plasma enhanced deposition (PED) or low pressure metal-organic chemical vapor deposition (LPMOCVD). As a result of the inherent characteristics of the two methods, a wide range of operational temperatures and pressures are possible. Software is developed for system control including a graphical display of the process schematic. The deposition of GaAS on Si is given as one possible application for this type system.
Notes
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Graduation Date
1988
Semester
Spring
Advisor
Grogan, Austin L.
Degree
Master of Science (M.S.)
College
College of Engineering
Degree Program
Engineering
Format
Pages
62 p.
Language
English
Rights
Public Domain
Release Date
5-1-1988
Length of Campus-only Access
None
Access Status
Masters Thesis (Open Access)
Identifier
DP0023903
STARS Citation
Cox, David B., "The Design of a Dual Method Metal-Organic Chemical Vapor Deposition System" (1988). Retrospective Theses and Dissertations. 5150.
https://stars.library.ucf.edu/rtd/5150
Restricted to the UCF community until 5-1-1988; it will then be open access.