Title
Passive Broadband High Dynamic Range Semiconductor Limiters
Abstract
The principles of operation of semiconductor optical limiters which utilize two-photon absorption and free-carrier induced defocusing are described. We present a review of early work using psec pulses at 532 nm in ZnSe, in which the problem of damage in solid state limiters is overcome by optimizing the focusing geometry. Limiting energies as loW as 10 nJ are seen, and a dynamic range (damage energy divided by limiting energy) in excess of 104 is demonstrated. The somewhat complicated propagation theory is simplified into a set of scaling rules which are used to predict operating characteristics of semiconductor limiters at longer wavelengths and for shorter pulses. We present new limiting data obtained with longer pulses in ZnSe, in CdTe at 1.06 μm and InSb at 10.6 μm, and we compare these results with the scaling rules. © 1989 SPIE.
Publication Date
8-30-1989
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
1105
Number of Pages
103-113
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.960616
Copyright Status
Unknown
Socpus ID
84911751293 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84911751293
STARS Citation
Hagan, D. J.; Van Stryland, E. W.; and Wu, Y. Y., "Passive Broadband High Dynamic Range Semiconductor Limiters" (1989). Scopus Export 1980s. 373.
https://stars.library.ucf.edu/scopus1980/373