Title
Stability And Efficiency Of Some Amorphous Silicon Photovoltaic Modules
Abstract
Amorphous silicon photovoltaic modules from four US manufacturers were tested for their power generation. The modules were exposed in outdoor sunlight over a period of one year. Current-voltage (I-V) curve measurements were made on each module daily with the automated I-V curve tracer. From these measurements, module electrical performance characteristics were determined. It is shown that the power degradation of the amorphous silicon modules tested was 18 to 33% after the one-year period of sunlight exposure. The degradation in the voltage parameters is generally lower than in the current parameters, being less than 7% for open-circuit voltage. About half of the degradation in the peak power is due to the degradation of the fill factor. The power output of the modules had nearly stabilized in the first eight months of the sunlight exposures and their stabilized efficiences were in the range of 2.6 to 4.4%.
Publication Date
12-1-1989
Publication Title
Conference Proceedings - IEEE SOUTHEASTCON
Volume
3
Number of Pages
1442-1448
Document Type
Article; Proceedings Paper
Copyright Status
Unknown
Socpus ID
0024876873 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0024876873
STARS Citation
Atmaram, Gobind H.; Freen, Paul D.; Mishra, Pravat K.; and Stefanakos, Elias K., "Stability And Efficiency Of Some Amorphous Silicon Photovoltaic Modules" (1989). Scopus Export 1980s. 427.
https://stars.library.ucf.edu/scopus1980/427