Title

Studies on deposition parameters of silicon-nitride films prepared by a silane-nitrogen plasma-enhanced-chemical-vapour-deposition process nitride films prepared by a silane-nitrogen

Abstract

Silicon-nitride films were deposited by a plasma-enhanced-chemical-vapour-deposition (PECVD) technique using silane-nitrogen as the reactant-gas sources. The influence of the process parameters (such as the flow ratio of the reactant gases, the pressure, the substrate temperature, the radio frequency (r.f.) power, the time of deposition and the electrode spacing) on the deposition and etch rates were investigated and the experimental results are presented in detail. © 1994 Chapman & Hall.

Publication Date

10-1-1994

Publication Title

Journal of Materials Science: Materials in Electronics

Volume

5

Issue

5

Number of Pages

255-259

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/BF00921247

Socpus ID

0028516956 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028516956

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