Title

Investigation Of Pecvd Silicon Nitride Films For Surface Wave Devices

Abstract

Silicon nitride thin films deposited by plasma enhanced chemical vapor deposition (PECVD) have been investigated for application to SAW devices. A matrix of deposition conditions were investigated and the deposition parameters for high quality films applicable to SAW technology were found. It was confirmed that films having low optical attenuation also have correspondingly good acoustic properties. This paper will present the experimental procedures for depositing the silicon nitride films, the parameters for high quality film deposition and experimental results on the acoustic loss and velocity dispersion. Results indicate low SAW propagation loss and velocity dispersion correlate well with previous investigations.

Publication Date

1-1-1992

Publication Title

Proceedings - IEEE Ultrasonics Symposium

Volume

1992-October

Number of Pages

369-372

Document Type

Article; Proceedings Paper

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ULTSYM.1992.275980

Socpus ID

33747831665 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33747831665

This document is currently not available here.

Share

COinS