Title
Semiconductor Device Physics And Modelling. Part 2: Overview Of Models And Their Applications
Abstract
The classic semiconductor device models are reviewed and discussed. They include the generic models for more accurate device modelling, such as the Linvill lumped-circuit model and the Sah transmission-line circuit model, and the conventional models aimed at predicating the first-order device behaviour, such as the drift-diffusion model. Specific applications of these models on an n-p junction diode are illustrated. The increasingly important Monte Carlo simulation, which is a numerical technique for solving the Boltzmann transport equation, and which has become a standard method for simulating free-carrier transport in advanced semiconductor devices, is also briefly reviewed and discussed.
Publication Date
1-1-1992
Publication Title
IEE Proceedings, Part G: Circuits, Devices and Systems
Volume
139
Issue
6
Number of Pages
655-660
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1049/ip-g-2.1992.0099
Copyright Status
Unknown
Socpus ID
0026961171 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0026961171
STARS Citation
Liou, J. J., "Semiconductor Device Physics And Modelling. Part 2: Overview Of Models And Their Applications" (1992). Scopus Export 1990s. 1075.
https://stars.library.ucf.edu/scopus1990/1075