Title

Current-Voltage Characteristics Of Submicrom Gaas Mesfets With Nonuniform Channel Doping Profiles

Abstract

We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). The present model improves an existing model by allowing the possibility that the electric field near the source region can exceed a critical field, which is likely in an advanced submicrom MESFET operated in the quasi-saturation or saturation region. Furthermore, a realistic and nonuniform channel doping profile was considered in our calculations. Experimental data measured from a low-noise, ion-implanted MESFET are included in support of the model. The effects of different doping profiles and velocity profiles in the channel on the MESFET current-voltage characteristics were also investigated. © 1992.

Publication Date

1-1-1992

Publication Title

Solid State Electronics

Volume

35

Issue

11

Number of Pages

1639-1644

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(92)90191-E

Socpus ID

0026955331 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026955331

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