Title

Modelling The Channel-Length Modulation Coefficient For Junction Field-Effect Transistors

Abstract

The saturation current-voltage characteristics of a junction field-effect transistor (JFET) are influenced by the effective conducting channel length of the device. The effective channel length is modulated by the gate voltage and the drain voltage due to the variation of the thicknesses of the depletion layers associated with the top-and bottom-gate of the JFET. For a given gate voltage, the effective channel length will shrink if the drain voltage is increased, a mechanism normally described by the channel-length modulation coefficient k. This paper develops a model for calculating λ, when combined with a recently developed JFET static model, this λ model can be used to predict the saturation behaviour of JFETs. Experimental data are included in support of the model. © 1992 Taylor & Francis Ltd.

Publication Date

1-1-1992

Publication Title

International Journal of Electronics

Volume

72

Issue

4

Number of Pages

533-540

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/00207219208925595

Socpus ID

0026850687 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026850687

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