Title
Modelling The Channel-Length Modulation Coefficient For Junction Field-Effect Transistors
Abstract
The saturation current-voltage characteristics of a junction field-effect transistor (JFET) are influenced by the effective conducting channel length of the device. The effective channel length is modulated by the gate voltage and the drain voltage due to the variation of the thicknesses of the depletion layers associated with the top-and bottom-gate of the JFET. For a given gate voltage, the effective channel length will shrink if the drain voltage is increased, a mechanism normally described by the channel-length modulation coefficient k. This paper develops a model for calculating λ, when combined with a recently developed JFET static model, this λ model can be used to predict the saturation behaviour of JFETs. Experimental data are included in support of the model. © 1992 Taylor & Francis Ltd.
Publication Date
1-1-1992
Publication Title
International Journal of Electronics
Volume
72
Issue
4
Number of Pages
533-540
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1080/00207219208925595
Copyright Status
Unknown
Socpus ID
0026850687 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0026850687
STARS Citation
Wong, W. W. and Liou, J. J., "Modelling The Channel-Length Modulation Coefficient For Junction Field-Effect Transistors" (1992). Scopus Export 1990s. 1135.
https://stars.library.ucf.edu/scopus1990/1135