Title

Modulating The Bipolar Junction Transistor Subjected To Neutron Irradiation For Integrated Circuit Simulation

Abstract

Bipolar junction transistors (BJT’s) are susceptible to particle bombardment in radiative environment. This paper presents a model which is capable of predicting BJT performance subjected to neutron irradiation and is suitable for SPICE circuit simulation. It is shown that neutron irradiation affects slightly the emitter-base space-charge region capacitance but strongly the forward-active dc current gain. Results calculated from the present model compare favorably with measured dependencies available in the literature. The present model is also implemented into SPICE, and the performance of a BJT differential amplifier is simulated. © 1992 IEEE

Publication Date

1-1-1992

Publication Title

IEEE Transactions on Electron Devices

Volume

39

Issue

3

Number of Pages

593-597

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.123483

Socpus ID

0026838343 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026838343

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