Title

Current-Voltage Characteristics Of Bipolar Transistors Including Quasi-Saturation, Finite Collector Lifetime, And High-Low Junction Effects

Abstract

A physics-based and compact model is developed to predict the bipolar transistor DC characteristics covering all saturation, quasi-saturation, and active operations. The present model differs from the existing models in that the present model employs a regional approach rather than the charge-control approach used previously and that the present model requires only the physical parameters, such as device make-up, whereas the previous models often require parameters extracted from measurements. Device physics relevant to the base-collector junction, like current-induced base widening and conductivity modulation and electron-hole recombination in the quasi-neutral collector layer, are accounted for in the analysis. We show that the current-voltage characteristics predicted by the present model compare favourably with that obtained from measurements and simulations reported in the literature. © 1992 Taylor and Francis Ltd.

Publication Date

1-1-1992

Publication Title

International Journal of Electronics

Volume

72

Issue

1

Number of Pages

89-98

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/00207219208925557

Socpus ID

0026624655 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026624655

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