Title

Dispersion Of Bound Electronic Nonlinear Refraction In Solids

Abstract

A two-band model is used to calculate the scaling and spectrum of the nondegenerate nonlinear absorption ∆α(ω1; ω2). From this, the bound electronic nonlinear refractive index n2is obtained using a Kramers-Kronig transformation. We include the effects of two-photon and Raman transitions and the ac Stark shift (virtual band blocking). the theoretical calculation for n2 shows excellent agreement with measured values for a five order of magnitude variation in the modulus of n2 in semiconductors and wide-gap optical solids. We also present new measurements of n2 in semiconductors using the Z-scan method. the observed change of sign of n2 midway between the two-photon absorption edge and the fundamental absorption edge is also predicted. Thus, we now have a comprehensive theory that allows a determination of n2 at wavelengths beneath the band edge, given only the bandgap energy and the linear index of refraction. Such information is useful for a variety of applications including optical limiting, laser-induced damage, and all-optical switching. Some consequences for all-optical switching are discussed, and a wavelength criterion for the observation of switching is derived. © 1991 IEEE.

Publication Date

1-1-1991

Publication Title

IEEE Journal of Quantum Electronics

Volume

27

Issue

6

Number of Pages

1296-1309

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/3.89946

Socpus ID

0026169905 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026169905

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