Title

Physics-Based Large-Signal Heterojunction Bipolar Transistor Model For Circuit Simulation

Abstract

A comprehensive single heterojunction bipolar transistor (HBT) model suited for circuit simulation is presented. The model is developed in the Gummel-Poon homojunction bipolar transistor model tradition, but adds important heterostructure device physics as well as physical properties of 3 or 4 compound materials such as AlGaAs and GaAs. In contrast to the existing HBT models, which use the Gummel-Poon model and fit HBT experimental data by optimising a large pool of parameters extracted from HBT measurements, the present physics-based model requires only the knowledge of the device make-up (such as the doping concentration and layer thickness) and the material parameters (such as the energy bandgap and electron affinity). Comparisons between the model and measured dependencies for AlGaAs/GaAs/GaAs HBTs on important device specifications such as the DC current/voltage characteristics, DC current gain, and cutoff frequency are included.

Publication Date

1-1-1991

Publication Title

IEE proceedings. Part G. Electronic circuits and systems

Volume

138

Issue

1

Number of Pages

97-103

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1049/ip-g-2.1991.0018

Socpus ID

0026104319 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026104319

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