Title
Statistical And Numerical Method For Mosfet Integrated-Circuit Sensitivity Simulation Using Spice
Abstract
Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit are most influential on its performance and how variations of the device and process parameters affect the circuit output responses. The paper presents a systematic approach for analysis of metal-oxide-semiconductor field effect transistor (MOSFET) integrated circuit DC performance as a function of channel length and width variations. The method, which involves an algorithm based on the Tellegen theorem and a database that contains statistical information on MOSFET process parameters, is implemented in the widely used SPICE2 circuit simulator. Sensitivity simulation of a MOSFET operational amplifier is included to illustrate the usefulness of the method.
Publication Date
1-1-1991
Publication Title
IEE proceedings. Part G. Electronic circuits and systems
Volume
138
Issue
1
Number of Pages
77-82
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1049/ip-g-2.1991.0015
Copyright Status
Unknown
Socpus ID
0026103027 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0026103027
STARS Citation
Wong, W. W.; Winton, R. S.; and Liou, J. J., "Statistical And Numerical Method For Mosfet Integrated-Circuit Sensitivity Simulation Using Spice" (1991). Scopus Export 1990s. 1389.
https://stars.library.ucf.edu/scopus1990/1389