Title
Laser-Induced Darkening In Semiconductor-Doped Glasses
Abstract
We have performed experiments to characterize permanent laser-induced darkening in CdS.Sel,- semiconductor-doped glasses with picosecond pulses as a function of fluence, repetition rate, and pulse width. We find that the darkening occurs by means of a nonlinear process that exhibits an anomalous dependence on pulse width. Transmission spectra show that the induced darkening is uniformover the spectral range from the absorption edge out to 820 Am. Darkening in a number of different glasses is compared. On the basis of our results we propose a mechanism that involves photoassistedtrapping of electrons from the semiconductor microcrystallites into states within the glass host material. © 1991 Optical Society of America.
Publication Date
1-1-1991
Publication Title
Journal of the Optical Society of America B: Optical Physics
Volume
8
Issue
7
Number of Pages
1531-1536
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1364/JOSAB.8.001531
Copyright Status
Unknown
Socpus ID
0001641199 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0001641199
STARS Citation
Malhotra, J.; Hagan, D. J.; and Potter, B. G., "Laser-Induced Darkening In Semiconductor-Doped Glasses" (1991). Scopus Export 1990s. 1430.
https://stars.library.ucf.edu/scopus1990/1430