Title
The Use Of Microwaves To Characterize Optically Stimulated Semiconductors
Abstract
The author discusses a theoretical model describing the microwave transmission and reflection properties of semiconductor wafers after they have been illuminated by a short pulse of light from a laser. The model has three fundamental parts. The first part describes the absorption mechanism of the incident light pulse throughout the semiconductor, given the electron-hole-pair concentration as a function of position. In the second part the electron-hole-pair concentration during the decay process is described. Part three describes the microwave properties of the semiconductor as the electron-hole pairs return to their equilibrium state.
Publication Date
12-1-1990
Publication Title
Proceedings of the Annual Southeastern Symposium on System Theory
Number of Pages
624-629
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0025660517 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0025660517
STARS Citation
Brown, H. K., "The Use Of Microwaves To Characterize Optically Stimulated Semiconductors" (1990). Scopus Export 1990s. 1447.
https://stars.library.ucf.edu/scopus1990/1447