Title

Semiconductor Nonlinearities For Optical Limiting

Abstract

Summary form only given. Passive optical limiting results from irradiance-dependent nonlinear optical processes in materials. The mechanisms responsible for passive limiting using semiconductors are reviewed. These devices utilize two-photon absorption (2PA) along with photogenerated carrier defocusing within the material to limit the output fluence and irradiance. The contribution from the bound electronic nonlinear refractive index n2 has been ignored previously. Recent measurements show that n2 contributes significantly to the observed self-defocusing. It had previously been assumed that the electronic Kerr induced refraction (n2) was positive. Using a newly developed Z-scan technique it was observed that n2 changes sign from positive to negative at a wavelength somewhere between the 2PA and fundamental absorption edges. The sensitivity of the Z-scan technique makes possible accurate measurements of the 2PA coefficient, the free-carrier refraction coefficient, and n2 for several semiconductors at different wavelengths. The equations governing these nonlinearities are given.

Publication Date

12-1-1990

Number of Pages

311-312

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0025540960 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0025540960

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