Title

Nonlinearities In Semiconductors For Optical Limiting

Abstract

We present measurements of nonlinear absorption and refraction in semiconductors used in the realization of optical limiters. We show that nonlinear refraction at 532 nm in ZnSe is caused by a negative third order electronic Kerr effect in addition to the two-photon-Absorption (2PA) induced carrier refraction. We have used time-resolved beam distortion, picosecond time-resolved degenerate four-wave mixing and our recently developed Z-scan technique to determine the sign and magnitude of the 2PA coefficient, the bound electronic nonlinearity, n2 and the refractive index change per free carrier.

Publication Date

10-1-1990

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

1307

Number of Pages

294-301

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.21679

Socpus ID

0040155011 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0040155011

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